Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures

Hironari CHIKAOKA  Yoichi TAKAKUWA  Kenji SHIOJIMA  Masaaki KUZUHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.5   pp.691-695
Publication Date: 2009/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.691
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaN,  HEMT,  potential barrier,  contact resistance,  tunneling current density,  

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Summary: 
We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n+-AlXGa1 - XN layer between an n +-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n+-AlXGa1-XN. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AlGaN/GaN heterostructure.