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A PN Junction-Current Model for Advanced MOSFET Technologies
Ryosuke INAGAKI
Norio SADACHIKA
Mitiko MIURA-MATTAUSCH
Yasuaki INOUE
Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E92-A No.4 pp.983-989
Publication Date: 2009/04/01
Online ISSN: 1745-1337
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category:
Keyword:
HiSIM,
PN junction current,
diode current,
surface potential,
Full Text: PDF(972.8KB)
Summary:
A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.
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