A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs

Toshihiro MATSUDA  Yuya SUGIYAMA  Keita NOHARA  Kazuhiro MORITA  Hideyuki IWATA  Takashi OHZONE  Takayuki MORISHITA  Kiyotaka KOMOKU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.8   pp.1331-1337
Publication Date: 2008/08/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.8.1331
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microelectronic Test Structures (ICMTS2007))
Category: 
Keyword: 
CMOS,  symmetry,  orientation dependence,  drain current,  substrate current,  

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Summary: 
A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry characteristics of IDsat and IBmax with respect to the interchange of source and drain was examined. Although both IDsat and IBmax have similar channel orientation dependence, IBmax in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.