Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator

Dong Uk LEE  Seon Pil KIM  Tae Hee LEE  Eun Kyu KIM  Hyun-Mo KOO  Won-Ju CHO  Young-Ho KIM 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E91-C  No.5  pp.747-750
Publication Date: 2008/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
In2O3,  memory,  SOI,  nano-particles,  nonvolatile, 

Full Text: PDF(713.2KB)

Summary: 
We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7 nm and 61011 cm-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1 V at initial status.