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Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator
Dong Uk LEE
Seon Pil KIM
Tae Hee LEE
Eun Kyu KIM
IEICE TRANSACTIONS on Electronics Vol.E91-C No.5 pp.747-750
Publication Date: 2008/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Full Text: PDF(713.2KB)
We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7 nm and 61011 cm-2, respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1 V at initial status.