Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method

Helmy FITRIAWAN  Matsuto OGAWA  Satofumi SOUMA  Tanroku MIYOSHI 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E91-C  No.1  pp.105-109
Publication Date: 2008/01/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
non-equilibrium Green's function,  quantum transport,  tight-binding approximation,  sp3s*,  double-gate MOSFETs,  Poisson's equation, 

Full Text: PDF(1.7MB)

Summary: 
The analysis of multiband quantum transport simulation in double-gate metal oxide semiconductor field effects transistors (DG-MOSFETs) is performed based on a non-equilibrium Green's function (NEGF) formalism coupled self-consistently with the Poisson equation. The empirical sp3s* tight binding approximation (TBA) with nearest neighbor coupling is employed to obtain a realistic multiband structure. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. As a result, it is found that the multiband simulation results on potential and current profiles show significant differences, especially in higher applied bias, from those of conventional effective mass model.