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Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
IEICE TRANSACTIONS on Electronics Vol.E91-C No.1 pp.105-109
Publication Date: 2008/01/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
non-equilibrium Green's function,
Full Text: PDF(1.7MB)
The analysis of multiband quantum transport simulation in double-gate metal oxide semiconductor field effects transistors (DG-MOSFETs) is performed based on a non-equilibrium Green's function (NEGF) formalism coupled self-consistently with the Poisson equation. The empirical sp3s* tight binding approximation (TBA) with nearest neighbor coupling is employed to obtain a realistic multiband structure. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. As a result, it is found that the multiband simulation results on potential and current profiles show significant differences, especially in higher applied bias, from those of conventional effective mass model.