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Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography
IEICE TRANSACTIONS on Electronics Vol.E91-C No.12 pp.1852-1855
Publication Date: 2008/12/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
organic static induction transistor,
electron beam lithography,
Full Text: PDF(567KB)
Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.