Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

Hiroyuki IECHI  Yasuyuki WATANABE  Hiroshi YAMAUCHI  Kazuhiro KUDO 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E91-C  No.12  pp.1843-1847
Publication Date: 2008/12/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category: Transistors
Keyword: 
pentacene,  zinc oxide,  sputter,  field effect transistor,  interface,  CMOS inverter,  organic logic circuit, 

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Summary: 
We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.