Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications

Oktay YILMAZOGLU  Kabula MUTAMBA  Dimitris PAVLIDIS  Marie Rose MBARGA  

IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.7   pp.1037-1041
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.1037
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
GaN,  pressure sensor,  HEMT,  Schottky diode,  

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Sensing elements based on AlGaN/GaN HEMT and Schottky diode structures have been investigated in relation with the strain sensitivity of their characteristics. Piezoresistance of the Al0.3Ga0.7N/GaN HEMT-channel as well as changes in the current-voltage characteristics of the Schottky diodes have been observed with gauge factor (GF) values ranging between 19 and 350 for the selected biasing conditions. While a stable response to strain was measured, the observed temperature dependence of the channel resistance demonstrates the need for a systematic characterisation of the sensor properties to allow compensation of the observed temperature effects.