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A Leakage Reduction Scheme for Sleep Transistors with Decoupling Capacitors in the Deep Submicron Era
Kazutoshi KOBAYASHI Akihiko HIGUCHI Hidetoshi ONODERA
IEICE TRANSACTIONS on Electronics
Publication Date: 2006/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
sleep transistor, decoupling capacitor, MTCMOS, low power,
Full Text: PDF(442KB)>>
Sleep transistors such as MTCMOS and SCCMOS drastically reduce leakage current, but their ON resistances cause significant performance degradation. Larger sleep transistors reduce their ON resistances, but increase leakage current in a sleep mode. Decoupling capacitors beside sleep transistors reduce leakage current. Experimental results show that PMOS SCCMOS with a 4 pF decoupling capacitor reduces leakage current by 1/673 on a 64 bit adder in a 90 nm process.