A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors

Ryoichi ISHIHARA  Arie GLAZER  Yoel RAAB  Peter RUSIAN  Mannie DORFAN  Benzi LAVI  Ilya LEIZERSON  Albert KISHINEVSKY  Yvonne van ANDEL  Xin CAO  Wim METSELAAR  Kees BEENAKKER  Sara STOLYAROVA  Yael NEMIROVSKY  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.10   pp.1377-1382
Publication Date: 2006/10/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.10.1377
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
polycrystalline-Si,  thin-film transistors,  gas immersed laser doping,  solid-state laser,  

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Summary: 
CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of poly-Si TFTs were improved by SALA. The field effect mobility of n- and p-channel TFTs is 84 cm2/Vs and 75 cm2/Vs, respectively.