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Design and Application of Ferroelectric Memory Based Nonvolatile SRAM
IEICE TRANSACTIONS on Electronics Vol.E87-C No.11 pp.1769-1776
Publication Date: 2004/11/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics)
programmable logic devices,
Full Text: PDF(1.6MB)
Circuit techniques to realize stable recall operation and virtually unlimited read/program cycle operations in ferroelectric memory based nonvolatile (NV) SRAM composed of six-transistor and four-ferroelectric capacitor cells have been developed. Unlimited program cycle operation independent of ferroelectric material characteristics is realized by proper control of plate lines. Reliability evaluation results show that the developed memory cell has sufficient operation margin after stresses of temperature, fatigue, DC bias. Application of NV-SRAM to programmable logic devices has been discussed with a prototype of dynamically programmable gate arrays.