Technology Modeling for Emerging SOI Devices

Meikei IEONG  Phil OLDIGES 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E86-C  No.3  pp.301-307
Publication Date: 2003/03/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
TCAD,  device modeling,  silicon-on-insulator,  strained-silicon,  double-gate, 

Full Text: PDF(488.7KB)

Summary: 
New physical models, algorithms, and parameters are needed to accurately model emerging silicon-on-insulator (SOI) devices. The modeling approaches for various emerging SOI technologies are discussed in this paper.