Characteristics of GaAs HEMTs with Flip-Chip Interconnections

Naoko ONO  Fumio SASAKI  Kazuhiro ARAI  Hiroyuki YOSHINAGA  Yuji ISEKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.12   pp.2452-2461
Publication Date: 2003/12/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Recent Trends on Microwave and Millimeter Wave Application Technology)
Category: Amplifier
Keyword: 
GaAs,  HEMT,  flip-chip interconnection,  current path,  inverted microstrip line,  

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Summary: 
A GaAs HEMT with flip-chip interconnections using a suitable transmission line has been developed. The underfill resin, which was not used for the conventional flip-chip interconnection structure, was adopted between GaAs chip and assembly substrate to obtain high reliability. The underfill resin is effective in relaxing the thermal stress between the chip and the substrate and in encapsulating the chip. There are various possible ground current paths for the GaAs chip in the structure with flip-chip interconnections. An actual ground current path is determined depending on the transmission line type for the chip. For an active device, it is important to utilize an assembly structure capable of realizing excellent high-frequency characteristics. In addition, each transmission line for the chip has its own transmission characterizations such as characteristic impedance. Therefore, it is necessary to choose a suitable transmission line for the chip. We evaluated the high-frequency characteristics of the HEMT test element groups (TEGs) with flip-chip interconnection for three types of transmission lines: with a microstrip line (MSL), with a coplanar waveguide (CPW), and with an inverted microstrip line (IMSL). All three types of TEGs had similar values of a maximum available power gain (MAG) at 30 GHz. However, it was found that the IMSL-type TEG, which had superior characteristics in high-frequency ranges of more than 30 GHz, is the most suitable type. The IMSL-type TEG had an MAG of 10.02 dB and a Rollett stability factor K of 1.20 at 30 GHz.