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A Design Methodology for Low EMI Noise LSI with Fast and Accurate Estimation
Hiroyuki TSUJIKAWA Shozo HIRANO Kenji SHIMAZAKI
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/12/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Parasitics and Noise
EMI, noise, simulation, decoupling, capacitor, CMOS,
Full Text: PDF(1.1MB)>>
Large-scale integration (LSI) microchips are widely used in many types of modern electronic products including electric appliances, cellular phones, toys, electronic games, and automobiles. The electromagnetic interference (EMI) noise produced by these micro devices can cause significant operational problems in other devices in the system. Some methods that have been proposed for such analysis estimates the EMI noise characteristic through transistor-level power simulation. However, in these methods, transistor-level circuit simulation is performed by combining the power-supply impedance model and the power-supply source model. In general, transistor-level simulators are too slow for practical application-specific integrated circuit (ASIC) design. In this paper, a total solution for reducing EMI noise in LSI microchips was presented. The proposed design methodology integrates fast and accurate estimation, reduction, and verification. The method was successfully applied to the design of a 32-bit microprocessor, achieving a 2-dB noise reduction in the FM frequency band and 10-dB reduction at 1 GHz. The proposed design methodology is a powerful solution for LSI designers as a tool for minimizing EMI noise and achieve higher levels of reliability for the microelectronic products.