Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs

Takashi MIZUTANI  Makoto YAMAMOTO  Shigeru KISHIMOTO  Koichi MAEZAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.10   pp.1318-1322
Publication Date: 2001/10/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
low-frequency noise,  HEMT,  Arrhenius plot,  DX center,  Lorentz noise,  

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Summary: 
The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.