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Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.573-578
Publication Date: 2000/04/20
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
GaN-based semiconductor laser-diode,
2-step grown index-guided structure,
Full Text: PDF(1012.6KB)
Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.