Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes

Toshiyuki SATO  Motoaki IWAYA  Kimio ISOMURA  Tsutomu UKAI  Satoshi KAMIYAMA  Hiroshi AMANO  Isamu AKASAKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E83-C   No.4   pp.573-578
Publication Date: 2000/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
Category: 
Keyword: 
GaN-based semiconductor laser-diode,  transverse-mode,  ridge-waveguide structure,  2-step grown index-guided structure,  

Full Text: PDF(1009.8KB)
>>Buy this Article


Summary: 
Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.