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A Sub 1-V L-Band Low Noise Amplifier in SOI CMOS
Hiroshi KOMURASAKI Hisayasu SATO Kazuya YAMAMOTO Kimio UEDA Shigenobu MAEDA Yasuo YAMAGUCHI Nagisa SASAKI Takahiro MIKI Yasutaka HORIBA
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2000/02/25
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
SOI CMOS, low noise amplifier, L band, low voltage, RF,
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This paper describes a sub 1-V low noise amplifier (LNA) fabricated using a 0.35 µm SOI (silicon on insulator) CMOS process. The SOI devices have high speed performance even at low operating voltage (below 1 V) because of their smaller parasitic capacitance at source and drain than those of bulk MOSs. A body of a MOSFET can be controlled by using a field shield (FS) plate. The transistor body of the LNA is connected to its gate. The threshold voltage of the transistor becomes lower due to the body-biased effect so that a large drain current keeps the gain high, and active-body control improves the 1-dB gain compression point. A gain of 7.0 dB and a Noise Figure (NF) of 3.6 dB are obtained at 1.0 V and 1.9 GHz. The output power at the 1-dB gain compression point is +1.5 dBm. The gain and the output power at the 1-dB gain compression point are higher by 1.2 dB and 2.9 dB respectively than those of a conventionally body-fixed LNA. A 5.5 dB gain is also obtained at the supply voltage of 0.5 V.