Noise Modelling in Linear and Nonlinear Devices

Alain CAPPY  Francois DANNEVILLE  Gilles DAMBRINE  Beaudouin TAMEN  

IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.6   pp.900-907
Publication Date: 1999/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
noise,  HEMT,  HBT,  amplifier,  mixer,  

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This paper presents a review of the techniques and models that can be used for the noise performance calculation of active devices under linear and nonlinear operations. In a first part, the modeling techniques and the noise models of FETs, HEMTs, BJTs and HBTs are described. In the second part, a generalization of the impedance field method for the noise modeling in devices under nonlinear periodic operation is proposed. This method can be used for the modeling of microwave and millimeter wave mixers and oscillators.