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Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
Yohtaro UMEDA Takatomo ENOKI Taiichi OTSUJI Tetsuya SUEMITSU Haruki YOKOYAMA Yasunobu ISHII
IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
InP, HEMT, IC, optical communication, delay,
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This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2 : 1 multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40 Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.