Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs

Hermann SCHUMACHER  Uwe ERBEN  Wolfgang DURR  Kai-Boris SCHAD  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E82-C   No.11   pp.1943-1950
Publication Date: 1999/11/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
Silicon-Germanium,  wireless,  receivers,  heterojunction bipolar transistor,  microwave circuits,  electronic noise,  

Full Text: PDF(1MB)
>>Buy this Article


Summary: 
Silicon-based monolithic microwave integrated circuits (MMICs) present an interesting option for low-cost consumer wireless systems. SiGe/Si heterojunction bipolar transistors (HBTs) are a major driving force behind Si-based MMICs, because they offer excellent microwave performance without aggressive lateral scaling. This article reviews opportunities for receiver frontend components (low-noise amplifiers and mixers) using SiGe HBTs.