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A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9 GHz PHS
IEICE TRANSACTIONS on Electronics Vol.E80-C No.6 pp.788-793
Publication Date: 1997/06/20
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
SPDT switch IC,
single power supply operation,
personal handy phone system,
Full Text: PDF(576.3KB)
A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in 1.9 GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved an output power of 25.0 dBm at 1 dB gain compression point, a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.