Defect Detection of Passivation Layer by a Bias-Free Cu Decoration Method

Tetsuaki WADA  Shinji NAKANO 

Publication
IEICE TRANSACTIONS on Electronics  Vol.E77-C  No.4  pp.585-589
Publication Date: 1994/04/20
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on LSI Failure Analysis)
Category: 
Keyword: 
semiconductor,  passivation,  defect,  reliability,  humidity test, 

Full Text: PDF(976.6KB)

Summary: 
New detection method of passivation defect was studied. The method was the Cu decoration method without bias (bias-free Cu decoration). As the result of comparison with conventional method, it was found that a bias-free Cu decoration method was effective, sensitive and simple. In this method, the difference of humidity resistance induced by poor passivation coverage could be evaluated.