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Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems
Shirun HO Aya MORIYOSHI Isao OHBU Osamu KAGAYA Hiroshi MIZUTA Ken YAMAGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
transconductance, mobility, self-consistent and nonequilibrium screening, heavily doped systems, ionized impurity scattering,
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A new mobility model dependent upon electron concentration is presented for studying the screening effect on ionized impurity scattering. By coupling this model with the drift-diffusion and Hartree models, the effects of self-consistent and quasi-equilibrium screening on carrier transport in heavily doped systems are revealed for first time. The transport mechanism is found to be dominated by the electron-concentration-dependent mobility, and transconductance is shown to be determined by effective mobility and changes from degraded to enhanced characteristics with electron concentration modulation.