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Josephson NDRO Memory Cell with a Direct-Coupled Sense Gate
Keiji ENPUKU Kuniaki SUEOKA Keiji YOSHIDA Fujio IRIE
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1984/06/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Other Devices
Full Text: PDF(140.7KB)
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A new type of Josephson NDRO memory cell is presented, where a sense gate is coupled directly to the memory part, instead of the conventional magnetic coupling scheme. The memory cell operates without complexity of the sequence of signals, and the operation margin is shown to be 20%.