CCD Linear Image Sensor with 2,048 Elements

Takashi WATANABE  Tadashi NAGAKAWA  Kiyotoshi MISAWA  Kozo FUJINO  Shigehiro MIYATAKE  Shin-ichi OGAWA  Osamu MATSUI  Katsunobu AWANE  

IEICE TRANSACTIONS (1976-1990)   Vol.E63   No.12   pp.855-862
Publication Date: 1980/12/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Semiconductors

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A new CCD linear image sensor with 2,048 elements has been developed by introducing photodiode processed by selective oxidation and ion implantation technologies. This construction provides high quantum efficiency at visible light with smooth spectral response, an output non-uniformity of1.5% and a dark current saturation time of 20 s. A transfer efficiency of 99.999% is achieved from a two-phase buried channel CCD. Transfer loss mechanism at a transfer gate was examined and the minimum aperture time of the gate proved to be as low as 1 µs. Spatial resolution of the device is superior to conventional sensors because of sharp sensitivity profile of the photoelement.