Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

Yuto FUTAMURA  Katsunori MAKIHARA  Akio OHTA  Mitsuhisa IKEDA  Seiichi MIYAZAKI  

IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.6   pp.458-461
Publication Date: 2019/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018FUP0007
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Si quantum dots,  Ge core,  electron field emission,  multiple-stacked structure,  electric field concentration,  

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We have fabricated multiple-stacked Si quantum dots (QDs) with and without Ge core embedded in a SiO2 network on n-Si(100) and studied their field electron emission characteristics under DC bias application. For the case of pure Si-QD stacks with different dot-stack numbers, the average electric field in dot-stacked structures at which electron emission current appeared reached minimum value at a stack number of 11. This can be attributed to optimization of the electron emission due to enhanced electric field concentration in the upper layers of the dot-stacked structures and reduction of the electron injection current from the n-Si substrate, with an increased stack number. We also found that, by introducing Ge core into Si-QDs, the average electric field for the electron emission can be reduced below that from pure Si-QDs-stacked structures. This result implies that the electric field is more concentrated in the upper Si-QDs with Ge core layers due to deep potential well for holes in the Ge core.