Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process

Rengie Mark D. MAILIG  Shun-ichiro OHMI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.6   pp.447-452
Publication Date: 2019/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018FUP0001
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
palladium silicide,  TiN encapsulating layer,  dopant segregation process,  S/D engineering,  Schottky barrier height,  

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Summary: 
We investigated the low temperature formation of Pd2Si on Si(100) with TiN encapsulating layer formed at 500°C/1 min. Furthermore, the dopant segregation process was performed with ion dose of 1x1015 cm-2 for B+. The uniform Pd2Si was successfully formed with low sheet resistance of 10.4 Ω/sq. Meanwhile, the PtSi formed on Si(100) showed rough surface morphology if the silicidation temperature was 500°C. The estimated Schottky barrier height to hole of 0.20 eV (qφBp) was realized for n-Si(100).