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Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process
Rengie Mark D. MAILIG Shun-ichiro OHMI
IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
palladium silicide, TiN encapsulating layer, dopant segregation process, S/D engineering, Schottky barrier height,
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We investigated the low temperature formation of Pd2Si on Si(100) with TiN encapsulating layer formed at 500°C/1 min. Furthermore, the dopant segregation process was performed with ion dose of 1x1015 cm-2 for B+. The uniform Pd2Si was successfully formed with low sheet resistance of 10.4 Ω/sq. Meanwhile, the PtSi formed on Si(100) showed rough surface morphology if the silicidation temperature was 500°C. The estimated Schottky barrier height to hole of 0.20 eV (qφBp) was realized for n-Si(100).