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The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation
Binjian ZENG Jiajia LIAO Qiangxiang PENG Min LIAO Yichun ZHOU Shun-ichiro OHMI
IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
SBT thin film, Kr/O2 sputtering, electrical properties, XRD,
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For the further scaling and lower voltage applications of nonvolatile ferroelectric memory, the effect of Kr/O2 sputtering for SrBi2Ta2O9 (SBT) thin film formation was investigated utilizing a SrBi2Ta2O9 target. The 80-nm-thick SBT films were deposited by radio-frequency (RF) magnetron sputtering on Pt/Ti/SiO2/Si(100). Compared with Ar/O2 sputtering, the ferroelectric properties such as larger remnant polarization (Pr) of 3.2 μC/cm2 were observed with decrease of leakage current in case of Kr/O2 sputtering. X-ray diffraction (XRD) patterns indicated that improvement of the crystallinity with suppressing pyrochlore phases and enhancing ferroelectric phases was realized by Kr/O2 sputtering.