The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)

Min Gee KIM  Shun-ichiro OHMI  

IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.6   pp.435-440
Publication Date: 2019/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018FUP0002
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
ferroelectric HfO2,  undoped HfO2,  post-metallization annealing,  MFS diodes,  

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We have investigated post-metallization annealing (PMA) utilizing TiN gate electrode on the thin ferroelectric undoped HfO2 directly deposited on p-Si(100) by RF magnetron sputtering. By post-deposition annealing (PDA) process at 600°C/30 s in N2, the memory window (MW) in the C-V characteristics was observed in the Al/HfO2/p-Si(100) diodes with 15 to 24-nm-thick HfO2. However, it was not obtained when the thickness of HfO2 was 10 nm. On the other hand, the MW was observed for Pt/TiN/HfO2 (10 nm)/p-Si(100) diodes utilizing PMA process at 600°C/30 s. The MW was 0.5 V when the bias voltage was applied from -3 to 3 V.