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High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices
Shigeru KANAZAWA Hiroshi YAMAZAKI Yuta UEDA Wataru KOBAYASHI Yoshihiro OGISO Johsuke OZAKI Takahiko SHINDO Satoshi TSUNASHIMA Hiromasa TANOBE Atsushi ARARATAKE
IEICE TRANSACTIONS on Electronics
Publication Date: 2019/04/01
Online ISSN: 1745-1353
Type of Manuscript: INVITED PAPER (Special Section on Progress in Optical Device Technology for Increasing Data Transmission Capacity)
flip-chip, EA-DFB laser, Mach-Zehnder modulator, packaging,
Full Text: FreePDF(1.9MB)
We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.