For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications
Youming ZHANG Fengyi HUANG Lijuan YANG Xusheng TANG Zhen CHEN
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2019/01/01
Online ISSN: 1745-1337
Type of Manuscript: Special Section LETTER (Special Section on Wideband Systems)
5G, cross-coupled buffer, low-noise amplifier (LNA), noise cancellation, wideband,
Full Text: PDF(983.3KB)
>>Buy this Article
This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.