Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

Ryo NAKAO  Masakazu ARAI  Takaaki KAKITSUKA  Shinji MATSUO  

IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.7   pp.537-544
Publication Date: 2018/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.537
Type of Manuscript: INVITED PAPER (Special Section on Distinguished Papers in Photonics)
heteroepitaxial growth,  Ge buffer,  MOVPE,  Si substrate,  

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We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metal-organic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.