Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

Yoshinobu MATSUDA  Mitsuru FUNATO  Yoichi KAWAKAMI  

IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.7   pp.532-536
Publication Date: 2018/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.532
Type of Manuscript: INVITED PAPER (Special Section on Distinguished Papers in Photonics)
III-nitride semiconductor,  three-dimensional structure,  polychromatic emission,  

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The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (=1=12=2) GaN substrates are discussed. The structure is composed of (=1=12=2), {=110=1}, and {=1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (=1=12=2) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.