For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
A Novel Method to Measure Absolute Internal Quantum Efficiency in III-Nitride Semiconductors by Simultaneous Photo-Acoustic and Photoluminescence Spectroscopy
Atsushi A. YAMAGUCHI Kohei KAWAKAMI Naoto SHIMIZU Yuchi TAKAHASHI Genki KOBAYASHI Takashi NAKANO Shigeta SAKAI Yuya KANITANI Shigetaka TOMIYA
IEICE TRANSACTIONS on Electronics
Publication Date: 2018/07/01
Online ISSN: 1745-1353
Type of Manuscript: INVITED PAPER (Special Section on Distinguished Papers in Photonics)
internal quantum efficiency, recombination, PAS, PL,
Full Text: FreePDF(538.7KB)
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.