Characterization of Hysteresis in SOI-Based Super-Steep Subthreshold Slope FETs

Takayuki MORI  Jiro IDA  Shota INOUE  Takahiro YOSHIDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.5   pp.334-337
Publication Date: 2018/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.334
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
SOI,  steep subthreshold slope,  floating body effect,  feedback,  hysteresis,  

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Summary: 
We report the characterization of hysteresis in SOI-based super-steep subthreshold slope FETs, which are conventional floating body and body-tied, and newly proposed PN-body-tied structures. We found that the hysteresis widths of the PN-body-tied structures are smaller than that of the conventional floating body and body-tied structures; this means that they are feasible for switching devices. Detailed characterizations of the hysteresis widths of each device are also reported in the study, such as dependency on the gate length and the impurity concentration.