For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication
Kentaro TOKORO Shunsuke SAITO Kensaku KANOMATA Masanori MIURA Bashir AHMMAD Shigeru KUBOTA Fumihiko HIROSE
IEICE TRANSACTIONS on Electronics
Publication Date: 2018/05/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
ALD, SnO2, IR absorption spectroscopy, TFT,
Full Text: PDF(1.2MB)
>>Buy this Article
We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.