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Analysis of SCM-Based SSD Performance in Consideration of SCM Access Unit Size, Write/Read Latencies and Application Request Size
Hirofumi TAKISHITA Yutaka ADACHI Chihiro MATSUI Ken TAKECUHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2018/04/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
solid-state drive, storage-class memory, NAND flash memory,
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NAND flash memories used in solid-state drives (SSDs) will be replaced with storage-class memories (SCMs), which are comparable with NAND flash in their cost, and with DRAM in their speed. This paper describes the performance difference of the SCM/NAND flash hybrid SSD and the SCM-based SSD with between sector-unit read (512 Byte) and page-unit read (16 KByte, NAND flash page-size) using synthetic and real workload. Also, effect of the SCM read-unit size on SSD performance are analyzed. When SCM write/read latency is 0.1 us, performance difference of the SCM/NAND flash hybrid SSD with between page- and sector-unit read is about 1% and 6% at most for the write-intensive and read-intensive workloads, respectively. However, performance of the SCM-based SSD is significantly improved when sector-unit read is used because extra read latency does not occur. Especially, the SCM-based SSD IOPS is improved by 131% for proj_3 (read-hot-random), because its read request size is small but its read request ratio is large. This paper also shows IOPS of SCM-based SSD write/read with sector-unit read can be predicted by the average write/read request size of workloads.