Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application

Takayuki MORI  Jiro IDA  

IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.11   pp.916-922
Publication Date: 2018/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.916
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
body-tied,  floating-body,  SOI,  steep subthreshold slope,  ultralow power,  

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In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.