GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

Jitsuo OHTA  Jeong Woo SHON  Kohei UENO  Atsushi KOBAYASHI  Hiroshi FUJIOKA  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.2   pp.161-165
Publication Date: 2017/02/01
Online ISSN: 1745-1353
Type of Manuscript: INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
GaN,  graphene,  glass,  pulsed sputtering deposition,  

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Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axis-oriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.