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Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes
Cuong Manh TRAN Tatsuya MURAKAMI Heisuke SAKAI Hideyuki MURATA
IEICE TRANSACTIONS on Electronics
Publication Date: 2017/02/01
Online ISSN: 1745-1353
Type of Manuscript: BRIEF PAPER
pentacene OFETs, organic electronics,
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We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.