A Region-Based Through-Silicon via Repair Method for Clustered Faults

Tianming NI  Huaguo LIANG  Mu NIE  Xiumin XU  Aibin YAN  Zhengfeng HUANG  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.12   pp.1108-1117
Publication Date: 2017/12/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Integrated Electronics
3D ICs,  yield enhancement,  TSV redundancy,  reparability,  additional delay overhead,  

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Three-dimensional integrated circuits (3D ICs) that employ through-silicon vias (TSVs) integrating multiple dies vertically have opened up the potential of highly improved circuit designs. However, various types of TSV defects may occur during the assembly process, especially the clustered TSV faults because of the winding level of thinned wafer, the surface roughness and cleanness of silicon dies,inducing TSV yield reduction greatly. To tackle this fault clustering problem, router-based and ring-based TSV redundancy architectures were previously proposed. However, these schemes either require too much area overhead or have limited reparability to tolerant clustered TSV faults. Furthermore, the repairing lengths of these schemes are too long to be ignored, leading to additional delay overhead, which may cause timing violation. In this paper, we propose a region-based TSV redundancy design to achieve relatively high reparability as well as low additional delay overhead. Simulation results show that for a given number of TSVs (8*8) and TSV failure rate (1%), our design achieves 11.27% and 20.79% reduction of delay overhead as compared with router-based design and ring-based scheme, respectively. In addition, the reparability of our proposed scheme is much better than ring-based design by 30.84%, while it is close to that of the router-based scheme. More importantly, the overall TSV yield of our design achieves 99.88%, which is slightly higher than that of both router-based method (99.53%) and ring-based design (99.00%).