Quantum Dot Light-Emitting Diode with Ligand-Exchanged ZnCuInS2 Quantum Dot

Takeshi FUKUDA  Masatomo HISHINUMA  Junya MAKI  Hironao SASAKI  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.11   pp.943-948
Publication Date: 2017/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.943
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
semiconductor quantum dot,  quantum dot light-emitting diode,  ligand exchange,  alkyl thiol,  

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Nowadays, semiconductor quantum dots have attracted intense attention as emissive materials for light-emitting diodes, due to their high photoluminescence quantum yield and the controllability of their photoluminescence spectrum by changing the core diameter. In general, semiconductor quantum dots contain large amounts of organic ligands around the core/shell structure to obtain dispersibility in solution, which leads to solution processability of the semiconductor quantum dot. Furthermore, organic ligands, such as straight alkyl chains, are generally insulating materials, which affects the carrier transport in thin-film light-emitting diodes. However, a detailed investigation has not been performed yet. In this paper, we investigated the luminance characteristics of quantum-dot light-emitting diodes containing ZnCuInS2 quantum dots with different carbon chain lengths of alkyl thiol ligands as emitting layers. By evaluating the CH2/CH3 ratio from Fourier-transform infrared spectra and thermal analysis, it was found that approximately half of the oleylamine ligands were converted to alkyl thiol ligands, and the evaporation temperature increased with increasing carbon chain length of the alkyl thiol ligands based on thermogravimetric analysis. However, the photoluminescence quantum yield and the spectral shape were almost the same, even after the ligand-exchange process from the oleylamine ligand to the alkyl thiol ligand. The peak wavelength of the photoluminescence spectra and the photoluminescence quantum yield were approximately 610 nm and 10%, respectively, for all samples. In addition, the surface morphology of spin coated ZnCuInS2 quantum-dot layers did not change after the ligand-exchange process, and the root-mean-square roughness was around 1 nm. Finally, the luminance efficiency of an inverted device structure increased with decreasing carbon chain length of the alkyl thiol ligands, which were connected around the ZnCuInS2 quantum dots. The maximum luminance and current efficiency were 86 cd/m2 and 0.083 cd/A, respectively.