Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories

Hiroki SHIRAKAWA  Keita YAMAGUCHI  Masaaki ARAIDAI  Katsumasa KAMIYA  Kenji SHIRAISHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.10   pp.928-933
Publication Date: 2017/10/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MONOS,  archive memories,  charge trap memories,  first principals calculation,  

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Summary: 
We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.