Keyword : variability


Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement
Katsuhiro TSUJI Kazuo TERADA Ryota KIKUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/11/01
Vol. E97-C  No. 11 ; pp. 1117-1123
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETC-V curveCBCMvariability
 Summary | Full Text:PDF(1.8MB)

Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
Toshiro HIRAMOTO Anil KUMAR Takuya SARAYA Shinji MIYANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Vol. E96-C  No. 6 ; pp. 759-765
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
transistorMOSFETvariabilityoff-state stress
 Summary | Full Text:PDF(3.5MB)

Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
Tomoko MIZUTANI Anil KUMAR Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 630-633
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
variabilityMOS transistorthreshold voltageDIBLnormal distributionGumbel distribution
 Summary | Full Text:PDF(2.2MB)

NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
Nurul Ezaila ALIAS Anil KUMAR Takuya SARAYA Shinji MIYANO Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 620-623
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Negative Bias Temperature Instability (NBTI)variabilitySRAMtransistorMOSFET
 Summary | Full Text:PDF(1.1MB)

Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices
Kiyoshi TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4 ; pp. 414-420
Type of Manuscript:  INVITED PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
variabilityreliabilityrandom dopant fluctuationrandom telegraph noise
 Summary | Full Text:PDF(924.3KB)

Variation-Tolerance of a 65-nm Error-Hardened Dual-Modular-Redundancy Flip-Flop Measured by Shift-Register-Based Monitor Structures
Chikara HAMANAKA Ryosuke YAMAMOTO Jun FURUTA Kanto KUBOTA Kazutoshi KOBAYASHI Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/12/01
Vol. E94-A  No. 12 ; pp. 2669-2675
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: High-Level Synthesis and System-Level Design
Keyword: 
soft errorhardened designvariabilitytest structureshift register
 Summary | Full Text:PDF(3.1MB)

A New Statistical Timing Analysis Using Gaussian Mixture Models for Delay and Slew Propagated Together
Shingo TAKAHASHI Shuji TSUKIYAMA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2009/03/01
Vol. E92-A  No. 3 ; pp. 900-911
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
statistical timing analysisGaussian mixture modeldelay distributionslew distributionvariability
 Summary | Full Text:PDF(656.7KB)

Analytical Model of Static Noise Margin in CMOS SRAM for Variation Consideration
Hirofumi SHINOHARA Koji NII Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/09/01
Vol. E91-C  No. 9 ; pp. 1488-1500
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SRAMmemory cellstatic noise marginSNMvariability
 Summary | Full Text:PDF(803.7KB)

Manufacturability-Aware Design of Standard Cells
Hirokazu MUTA Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2007/12/01
Vol. E90-A  No. 12 ; pp. 2682-2690
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Physical Design
Keyword: 
manufacturabilityvariabilityDFMACLVstandard cellOPCRET
 Summary | Full Text:PDF(546.5KB)

Variability: Modeling and Its Impact on Design
Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/03/01
Vol. E89-C  No. 3 ; pp. 342-348
Type of Manuscript:  INVITED PAPER (Special Section on VLSI Design Technology in the Sub-100 nm Era)
Category: 
Keyword: 
variabilitywithin-die variabilitydie-to-die variabilitystatistical design
 Summary | Full Text:PDF(528.9KB)

Low-Voltage and Low-Power Logic, Memory, and Analog Circuit Techniques for SoCs Using 90 nm Technology and Beyond
Koichiro ISHIBASHI Tetsuya FUJIMOTO Takahiro YAMASHITA Hiroyuki OKADA Yukio ARIMA Yasuyuki HASHIMOTO Kohji SAKATA Isao MINEMATSU Yasuo ITOH Haruki TODA Motoi ICHIHASHI Yoshihide KOMATSU Masato HAGIWARA Toshiro TSUKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/03/01
Vol. E89-C  No. 3 ; pp. 250-262
Type of Manuscript:  INVITED PAPER (Special Section on VLSI Design Technology in the Sub-100 nm Era)
Category: 
Keyword: 
low powerCMOSSoC90 nmlow voltagevariability
 Summary | Full Text:PDF(2.1MB)

Statistical Modeling of Device Characteristics with Systematic Variability
Kenichi OKADA Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2 ; pp. 529-536
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
MOSFETvariabilitysystematicstochastic
 Summary | Full Text:PDF(325.2KB)