Keyword : trench isolation


A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
Kazunori KAWAMOTO Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2 ; pp. 260-266
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOSthick SOItrench isolationEL driverLDMOS
 Summary | Full Text:PDF(1.3MB)

Megabit-Class Size-Configurable 250-MHz SRAM Macrocells with a Squashed-Memory-Cell Architecture
Nobutaro SHIBATA Hiroshi INOKAWA Keiichiro TOKUNAGA Soichi OHTA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/01/25
Vol. E82-C  No. 1 ; pp. 94-104
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
SRAMmacrocellsize-configurablehigh speedlow powerper-bitline architecturecurrent-sense amplifiersquashed memory celltrench isolation
 Summary | Full Text:PDF(931.1KB)

7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
 Summary | Full Text:PDF(624.6KB)

A Bipolar-Based 0.5 µm BiCMOS Technology on Bonded SOI for High-Speed LSIs
Makoto YOSHIDA Toshiro HIRAMOTO Tsuyoshi FUJIWARA Takashi HASHIMOTO Tetsuya MURAYA Shigeharu MURATA Kunihiko WATANABE Nobuo TAMBA Takahide IKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1395-1403
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
BiCMOSbonded SOIdouble polysilicon bipolartrench isolationstress
 Summary | Full Text:PDF(1.1MB)

Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation
Satoshi MATSUDA Nobuyuki ITOH Chihiro YOSHINO Yoshiroh TSUBOI Yasuhiro KATSUMATA Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 124-128
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
trench isolationshallow trenchdeep trenchhigh-speed bipolar LSIsleakage currentmechanical stress
 Summary | Full Text:PDF(495.8KB)

Analysis of Localized Temperature Distribution in SOI Devices
Hizuru YAMAGUCHI Shigeki HIRASAWA Nobuo OWADA Nobuyoshi NATSUAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1438-1441
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
numerical simulationtemperature distributionSOI structuretrench isolation
 Summary | Full Text:PDF(337.6KB)