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Keyword : silicon
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A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
Yueh-Hua WANG
Ming-Hsiang CHO
Lin-Kun WU
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C
No. 9
pp. 1157-1162
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category:
Keyword:
de-embedding,
microwave,
MOSFETs,
noise,
RF,
silicon,
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Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate
Gong-Ru LIN
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C
No. 2
pp. 173-180
Type of Manuscript: Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: INVITED
Keyword:
Si-ion-implantation,
PECVD,
nanocrystal,
silicon,
Si-rich SiOx,
nano-pyramids,
nano-pillars,
MOSLED,
electroluminescence,
Fowler-Nordheim tunneling,
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The Impact of Silicon Photonics
Richard SOREF
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C
No. 2
pp. 129-130
Type of Manuscript: Special Section PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: INVITED
Keyword:
silicon,
optoelectronics,
integrated photonics,
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In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations
Christoph JUNGEMANN
Bernd MEINERZHAGEN
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3
pp. 314-319
Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
silicon,
noise,
drift-diffusion,
hydrodynamic,
Monte Carlo,
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Modeling of Dopant Diffusion in Silicon
Scott T. DUNHAM
Alp H. GENCER
Srinivasan CHAKRAVARTHI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/20
Vol. E82-C
No. 6
pp. 800-812
Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category:
Keyword:
dopant diffusion,
point defects,
silicon,
interstitial,
vacancy,
dopant/defect pairing,
coupled diffusion,
pair diffusion,
diffusivity,
equilibrium concentration,
metal diffusion,
lattice Monte Carlo,
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1/5 Power Law in PN-Junction Failure Mechanism Caused by Electrical-Over-Stress