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Keyword : oxygen
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SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen Sadao NAKASHIMA
Katsutoshi IZUMI
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/20
Vol. E75-C
No. 12
pp. 1415-1420
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers Keyword: SIMOX,
implantation,
dislocation,
oxygen,
SOI,
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