Keyword : negative differential resistance


Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources
Kwang-Jow GAN Dong-Shong LIANG Yan-Wun CHEN 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 2010/08/01
Vol. E93-D  No. 8 ; pp. 2068-2072
Type of Manuscript:  Special Section PAPER (Special Section on Multiple-Valued Logic and VLSI Computing)
Category: Multiple-Valued VLSI Technology
Keyword: 
multiple-valued logicnegative differential resistance BiCMOS process
 Summary | Full Text:PDF(291.7KB)

Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
Kwang-Jow GAN Dong-Shong LIANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/04/01
Vol. E93-C  No. 4 ; pp. 514-520
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
negative differential resistancePVCRhysteresis phenomenaBiCMOS process
 Summary | Full Text:PDF(504.2KB)

Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation
Youhei OOKAWA Shigeru KISHIMOTO Koichi MAEZAWA Takashi MIZUTANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 999-1004
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
negative differential resistanceresonant tunnelingoscillator
 Summary | Full Text:PDF(518KB)

Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si0.7Ge0.3 Virtual Substrates
Mathieu STOFFEL Jing ZHANG Oliver G. SCHMIDT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 921-925
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
SiGeinterband tunneling diodesnegative differential resistanceSiGe relaxed buffers
 Summary | Full Text:PDF(422.7KB)

10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices
Toshihiro ITOH Takao WAHO Koichi MAEZAWA Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Information and Systems
Publication Date: 1999/05/25
Vol. E82-D  No. 5 ; pp. 949-954
Type of Manuscript:  Special Section PAPER (Special Issue on Multiple-Valued Logic and Its Applications)
Category: Circuits
Keyword: 
resonant tunneling diodeHEMTmultiple-valued logicnegative differential resistance
 Summary | Full Text:PDF(675.7KB)

Surface Tunnel Transistors with Multiple Interband Tunnel Junctions
Toshio BABA Tetsuya UEMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 875-880
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Quantum Devices
Keyword: 
tunnel transistorinterband tunnelingnegative differential resistancefunctional circuitmultiple value
 Summary | Full Text:PDF(518.3KB)

Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation
Yutaka OHNO Shigeru KISHIMOTO Takashi MIZUTANI Koichi MAEZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1530-1536
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
resonant tunneling transistorMOBILEoperation speednegative differential resistancecapacitance
 Summary | Full Text:PDF(511.9KB)

Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs
Kevin Jing CHEN Koichi MAEZAWA Takao WAHO Masafumi YAMAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/11/25
Vol. E79-C  No. 11 ; pp. 1515-1524
Type of Manuscript:  Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Category: 
Keyword: 
RTDHEMTnegative differential resistancenegative transconductancequantum functional devices
 Summary | Full Text:PDF(883.1KB)

Monolithic Integration of Resonant Tunneling Diode and HEMT for Low-Voltage, Low-Power Digital Circuits
Yuu WATANABE Yasuhiro NAKASHA Kenji IMANISHI Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4 ; pp. 368-373
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
RTDHEMTSRAMnegative differential resistancedigital circuits
 Summary | Full Text:PDF(661.6KB)

Characterization for Negative Differential Resistance in Surface Tunnel Transistors
Tetsuya UEMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1444-1449
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
tunnel transistorinterband tunnelingnegative differential resistancebistable circuittrap-assisted tunneling
 Summary | Full Text:PDF(471.4KB)