Keyword : macro model


A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance
Takashi SAITO Toshiki KANAMOTO Saiko KOBAYASHI Nobuhiko GOTO Takao SATO Hitoshi SUGIHARA Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2010/09/01
Vol. E93-A  No. 9 ; pp. 1605-1611
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
LDMOSmacro modelgate-overlap capacitancecircuit simulation
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